Observation of temperatureinsensitive emission wavelength in GaInAs strained multiplequantumwire heterostructures

نویسندگان

  • D. E. Wohlert
  • S. T. Chou
  • A. C. Chen
  • K. Y. Cheng
چکیده

Related Articles Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures J. Appl. Phys. 111, 033103 (2012) Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 100, 052114 (2012) Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy Appl. Phys. Lett. 100, 053108 (2012) Single-photon generation from a nitrogen impurity center in GaAs Appl. Phys. Lett. 100, 042106 (2012) Growth orientation dependent photoluminescence of GaAsN alloys Appl. Phys. Lett. 100, 032108 (2012)

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تاریخ انتشار 2012